Evanescent coupling degradation from particle-induced voids in III-V/Si micro-transfer-printed integrated lasers

Physics and simulation of optoelectronic devices. Conference 2026

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Authors: Yang Liu, Jing Zhang (23775), Evangelia Delli, Günther Roelkens
DOI: 10.1117/12.3078863
Cited by: 0
References: 7

Abstract

Void-induced evanescent coupling degradation in InP-on-Si lasers is analyzed. A location-dependent analysis reveals 100nm particles at the tapers cause a 0.913 dB loss (vs. 0.058 dB at mid-coupon). Guidelines for void-tolerant evanescent interfaces on the SiPh platform are proposed.

Fields of Study & Subjects

Photonic and Optical Devices Semiconductor Lasers and Optical Devices 3D IC and TSV technologies

Publication details

Journal / source
Physics and simulation of optoelectronic devices. Conference
Pages
12–12
Publication date
5 March 2026
Language
EN