Growth of (0001) AlN and AlGaN by ammonia molecular beam epitaxy

Gallium Nitride Materials and Devices 2026

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Authors: James S. Speck, Ashley E. Wissel-Garcia, Feng Wu
DOI: 10.1117/12.3078890
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Gallium Nitride Materials and Devices
Pages
4–4
Publication date
5 March 2026
Language
EN