Uncooled GaAs-based O-band quantum dot DFB laser for CWDM4 and single-wavelength optical modules

Novel In-Plane Semiconductor Lasers 2026

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Authors: Stanislav Ročas, Evgenii Vostrikov, Konstantin Morozov, Mikhail S. Buyalo, S. V. Poltavtsev, Vladimir S. Mikhrin, Artem Zhabotinskii, A. I. Borodkin, Boris Kim, Sergey Mikhrin, Alexey Gubenko, Alexey Kovsh
DOI: 10.1117/12.3079253
Cited by: 0
References: 14

Abstract

High-performance uncooled O-band GaAs distributed-feedback laser tailored for next generation optical transceivers based on silicon photonics is presented. Based on a 1 mm straight-cavity design with MBE-grown InAs quantum dots, the device demonstrates mode-hop-free operation across a 0-90 °C temperature range, with side-mode suppression ratio exceeding 60 dB, and relative intensity noise below -155 dB/Hz. Output powers surpass 100 mW up to 70 °C, with a peak power conversion efficiency up to 28% at 60 °C.

Fields of Study & Subjects

Semiconductor Lasers and Optical Devices Semiconductor Quantum Structures and Devices Photonic and Optical Devices

Publication details

Journal / source
Novel In-Plane Semiconductor Lasers
Pages
3–3
Publication date
5 March 2026
Language
EN