Electronic band-structure, carrier processes, and lasing characteristics of GaAs-AlGaAs multiple quantum well nanowire lasers

Physics and simulation of optoelectronic devices. Conference 2026

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Authors: Anton V. Velychko, Haotian Zeng, Giorgos Boras, Ziyue Yin, Francisco Alvarado Cesar, Huiwen Deng, Hui Min Jia, Ana M. Sánchez, Huiyun Liu, David J. Mowbray
DOI: 10.1117/12.3079573
Cited by: 0

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Nanowire Synthesis and Applications Semiconductor Lasers and Optical Devices

Publication details

Journal / source
Physics and simulation of optoelectronic devices. Conference
Pages
31–31
Publication date
5 March 2026
Language
EN