Heterogeneously integrated InGaAs/InP avalanche photodiodes on silicon nitride waveguides for 1550nm wavelength

SPIE Silicon Photonics 2026

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Authors: Tasneem Fatema, Ming Xuan, Xiangwen Guo, Joe C. Campbell, M. Dagenais, Andréas Beling
DOI: 10.1117/12.3079898
Cited by: 0
References: 5

Abstract

We demonstrate a separate absorption, charge and multiplication (SACM) avalanche photodiode (APD) on silicon nitride (Si3N4) waveguide using an adhesive die-to-wafer bonding technique. Our heterogeneous APDs have a low dark current of 10 nA at -27 V. A 120 μm long APD has 77% internal quantum efficiency at unity gain, and a responsivity of 14 A/W at -29 V for -11.9 dBm input optical power at 1550 nm wavelength.

Fields of Study & Subjects

Photonic and Optical Devices Semiconductor Lasers and Optical Devices Advanced Semiconductor Detectors and Materials

Publication details

Journal / source
SPIE Silicon Photonics
Pages
7–7
Publication date
4 March 2026
Language
EN