High-power single-mode greenl lasers enabled by InGaN-Based VECSELs

In this work, we investigate designs for Vertical Extended Cavity Surface Emitting Lasers (VECSELs) using InₓGa₁₋ₓN/InᵧGa₁₋ᵧN quantum wells and barriers to achieve high-power, single-mode green light emission. We aim to pump the VECSELs with blue-violet (405–445 nm) continuous-wave semiconductor laser diodes, addressing the challenge of efficient green emission in nitride lasers. Using blue-violet laser pumps offers economic and practical advantages, enabling a compact, semiconductor-based VECSEL design. Aligning the pump wavelength close to the quantum barrier bandgap helps reduce heat dissipation, improving device performance. To fully absorb pump photons, the total barrier thickness is targeted at 300–400 nm, which requires careful management of strain and crystal quality.