850nm VCSEL for 112 Gbps NRZ and 200 Gbps PAM4 optical interconnects

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Authors: Zhiteng Luo, Huawen Hu, Haiqiang Wei, Xiaogang Lv, Tingyu Cheng, Fengbo Xie, Kangping Zhong, Jiaxing Wang, Connie J. Chang-Hasnain
Cited by: 0
References: 4

Abstract

The exponential growth in data center traffic driven by artificial intelligence (AI), Internet of Things (IoT), and 5G mobile networks has intensified demand for high-bandwidth, low-power optical interconnects. Vertical-cavity surface-emitting lasers (VCSELs) operating at 850 nm have emerged as the dominant solution for short-reach interconnects due to their inherent advantages in power efficiency, low latency, and cost-effectiveness. Here, we report our work on 850 nm multimode VCSELs to achieve high bandwidth to support single-channel 112 Gbps NRZ and 200 Gbps PAM4, a critical milestone for supporting next-generation 1.6T/3.2T Ethernet standards required by hyperscale data centers. We demonstrate an integrated optical transceiver system achieving unprecedented data rates using high bandwidth and pre-compensation capability of the driver and 850-nm VCSELs with a low relative intensity noise (RIN < -150 dB/Hz). The transmitter-receiver architecture successfully enabled 200 Gbps/lane transmission using PAM4 and 112 Gbps/lane with NRZ with the BER of 1.1×10-4 in back-to-back configuration, representing the ultra-high reported speeds for 850 nm VCSEL-based systems. These results are visually corroborated by clear eye openings observed at near-threshold baud rates, demonstrating exceptional signal integrity despite fiber dispersion effects.

Fields of Study & Subjects

Semiconductor Lasers and Optical Devices Optical Network Technologies Photonic and Optical Devices

Publication details

Journal / source
Vertical-Cavity Surface-Emitting Lasers
Pages
19–19
Publication date
5 March 2026
Language
EN