Nitrogen diffusion in doped and undoped b-Ga2O3

Oxide-based Materials and Devices 2026

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Authors: N. H. Nickel, Jörg Rappich, K. Hinrichs
DOI: 10.1117/12.3080714
Cited by: 0

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and devices GaN-based semiconductor devices and materials

Publication details

Journal / source
Oxide-based Materials and Devices
Pages
16–16
Publication date
5 March 2026
Language
EN