Silicon processing with a 2.1 µm ultrafast laser
Abstract
We present on the utilization of a robust and simple 2.1 µm-wavelength ultrafast solid-state laser for semiconductor processing. In tight focusing conditions, front-side modifications, scribe-and-cleave, as well as backside modifications are demonstrated on silicon. These experiments show the potential of the 2.1 µm-wavelength laser technology for micro-machining of silicon, germanium and compound semiconductors.
Fields of Study & Subjects
Laser Material Processing Techniques
Laser-Matter Interactions and Applications
Semiconductor Lasers and Optical Devices
Publication details
- Journal / source
- Laser-based Micro- and Nanoprocessing
- Pages
- 52–52
- Publication date
- 4 March 2026
- Language
- EN