Wideband dielectric rod antenna implemented on FR-4 substrate for THz application

We propose a silicon dielectric rod antenna (DRA) for a broadband and cost-effective terahertz (THz) transmitter integrated with an indium phosphide (InP) photoconductive device. To facilitate power transfer from the InP chip to the dielectric rod waveguide (DRW), a tapered-slot antenna (TSA) is employed, providing efficient and broadband coupling. The proposed system, which consists of a DRA and a flip-chip bonded InP active device, is developed on an FR-4 printed circuit board (PCB) with the aim of integrating photonic circuits. We also propose to apply an etching technique to the InP substrate for the photoconductive devices to improve coupling efficiency to the DRW at higher frequencies. In simulation, we confirmed that the proposed interconnection exhibits a 4-dB bandwidth exceeding 200 GHz and stable realized gain of over 5 dBi from 100 GHz to 220 GHz, showing potential for industrial THz applications such as wireless communications and non-destructive spectroscopy.