Improved performance of GaN-based ultraviolet avalanche photodetectors

Gallium Nitride Materials and Devices 2026

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Authors: Russell D. Dupuis, Davide Balzerani, Alexandra Dolgashev, Zhiyu Xu, Theeradetch Detchprohm, Nepomuck Otte, Dhrubes Biswas, Subhra Chowdhury
DOI: 10.1117/12.3082044
Cited by: 0
References: 10

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Radiation Detection and Scintillator Technologies

Publication details

Journal / source
Gallium Nitride Materials and Devices
Pages
47–47
Publication date
5 March 2026
Language
EN