GaAs/Si tandems for next generation high efficiency solar cells

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Authors: Thomas Tiedje
Cited by: 0
References: 16

Abstract

This paper argues that GaAs/Si tandem solar cells are the most promising approach for next generation PV for reasons of efficiency and long-term performance stability. Although low-cost mass production of GaAs cells has not been established, a similar manufacturing challenge with single crystal Si has been solved. The theoretical limiting efficiency of GaAs/Si depends on device configuration, number of electrical terminals and layer thicknesses, and exceeds 40%. Current matching in the tandem sub-cells is difficult to achieve in practice and is not needed with 4-terminal electrical connections. Calculated limits and many years of experience with single crystal Si suggest that a GaAs/Si module efficiency of 35% is achievable. The extra efficiency available with tandems is particularly beneficial in residential applications where the balance of systems costs are high and space is constrained.

Fields of Study & Subjects

solar cell performance optimization Silicon and Solar Cell Technologies Thin-Film Transistor Technologies

Publication details

Journal / source
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices
Pages
11–11
Publication date
5 March 2026
Language
EN