Fabrication and performance of GaInN/GaN multi-quantum-shell (MQS)/nanowire-based light emitting devices including the tunnel junction

The GaN nanowire-based nanostructures could successfully be grown on GaN template and/or GaN substrate by optimized MOVPE. However, the formation of the low-resistive tunnel junction in the GaN nanowire-based structure is not easy, because of the difficulty of the activation of Mg in the p-GaN. To solve this problem, we introduced the hydrogen-free sputtering growth of the n+-GaN, after the activation of p-GaN and p+-GaN. We observed 2-3 volts reduction of the threshold voltage in V-I characteristic. Details of the crystal growth and device performance will by described at this presentation.