A study of the structural, optical, and spectral characteristics of MBE-grown InAs quantum dot photodetector heterostructure with quaternary (In(Ga)As(Sb)) capping

2026

View at publisher
Authors: Rajib Saha, Raveesh Gourishetty, Subhananda Chakrabarti
DOI: 10.1117/12.3083942
Cited by: 0
References: 11

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Advanced Semiconductor Detectors and Materials solar cell performance optimization

Publication details

Pages
83–83
Publication date
16 January 2026