Halide vapor phase epitaxy of thick GaN and InGaN using GaClx and InClx

Our group has conducted thermodynamic analyses of GaN and InGaN growth using various group-III precursors to achieve rapid, thick GaN and InGaN layer growth. From a thermodynamic perspective, tri-halide vapor phase epitaxy (THVPE), employing metal trichlorides like InCl3 and GaCl3, is ideal for growing ultra thick GaN and InGaN alloys. This method offers excellent compositional control, high growth rates, prevents droplet formation, and results in low impurity concentrations for InGaN growth. In this presentation, we will show the impact of various growth parameters, including growth temperature, input partial pressures of group-III precursors, and the V/III ratio.