Monitoring energy-dependent ultrafast laser manufacturing inside gallium arsenide by fluorescence imaging

Ultrafast laser processing inside semiconductor materials faces the challenge of energy nonlinear transmission saturation, and it is difficult to observe the behavior of low-density plasma outside the focus region by traditional pump-detection technology. In this study, laser-induced plasma fluorescence imaging technology is used to visualize the low-density plasma in the pre-focal region of gallium arsenide (GaAs). By analyzing the relationship between fluorescence distribution and laser energy, the influence mechanism of incident energy on the actual energy flow at the focal point is revealed, and the simulation results further verify the process. This work provides a new way for quantitative evaluation of laser energy transfer in semiconductor materials.