DUV laser-induced a-SiO₂ compaction in photolithography projection optics:: from atomistic simulation to field validation in high-volume manufacturing systems

This study demonstrates deep‑ultraviolet laser‑induced nanoscale densification and quantum defect engineering in amorphous silicon dioxide through integrated atomistic simulation and high‑volume manufacturing validation. Controlled laser energy creates localized hotspots enabling precise modification via quantum defect engineering (oxygen‑deficient centers, E′ centers) and laser‑induced densification modifying Si–Si bond fractions for refractive‑index control. Molecular dynamics simulations with machine‑learning force fields model ≥10⁶ laser‑exposure cycles, revealing systematic structural evolution. Linear correlation links nanoscale compaction to optical constants. Fleet‑scale validation on 6 industrial scanners confirms simulation‑predicted evolution through wavefront monitoring, establishing nonlinear processing regimes. This approach enables precision optical property tuning in silica‑based nanophotonic materials for quantum information technologies and integrated photonics applications.