Monolithic integration of quantum dot laser on 300mm silicon photonic wafers

Monolithic III–V-on-silicon light sources are a key missing element for scalable silicon photonic integrated circuits. This talk presents a pocket-heteroepitaxy platform that directly grows InAs quantum-dot gain on 300-mm foundry silicon photonic wafers and enables efficient butt-coupling to Si/SiN waveguides. We first show electrically pumped Fabry–Pérot pocket lasers with CW operation up to 60 °C, 126.6 mW double-side output at 20 °C, and 8.6% wall-plug efficiency. We then address the dominant integration bottleneck—laser-to-waveguide coupling—via (i) two-step MOCVD+MBE growth plus polymer facet gap-fill, achieving single-mode DBR/ring-stabilized O-band lasing with up to 32 dB SMSR, operation to 105 °C, and multi-year projected lifetime; and (ii) selective-area MBE buffers that suppress polycrystalline sidewall growth, shrinking the air gap and reducing coupling loss from 12.05 dB to 9.07 dB. Together, these results outline a manufacturable path to wafer-scale, high-temperature, low-loss on-chip lasers for advanced silicon photonics.