Power scaling of broad-area laser diodes at 940 nm

High power broad-area laser diodes (LDs) at 940 nm are essential for primary pump source of fiber and solid-state laser systems in various applications. The wider waveguide widths and double-junction epitaxial designs are implemented in horizontal and vertical directions, and a comprehensive result of high-power single-emitter and bar LDs at 940 nm is presented. For 100 μm emitter width single-emitter LD, a high power of 11.4 W is achieved at 14 A, 105 °C, which is ideal for Lidar application. Meanwhile, we developed stripe widths from 100 to 320 μm in single-junction LDs, achieving a continuous-wave (CW) maximum output power of 45 W under room temperature. Additionally, we demonstrated LD bars (75% fill factor, 62 emitters, 2 mm cavity length), delivering over 600 W quasi-continuous-wave (200 μs, 400 Hz, MCC) output power at 500 A, 25 °C. The maximum PCE exceeds 73%. Furthermore, our double-junction laser bars operated at quasi-continuous-wave 1000 A with 2000 W output under room temperature, providing the possibility for the application of controlled nuclear fusion. These results highlight significant advancements in achieving high-power LDs across different spatial structures, enhancing the utility for various applications.