Deep-UV photonic devices enabled by distributed polarization doping

Semiconductor light emitting devices that produce photons in the ultraviolet or deep-ultraviolet wavelengths by direct current injection have become possible due to advances in the physics and materials science of ultrawide bandgap semiconductors based on aluminum nitride. These unique photonic devices can produce photons up to the direct energy gap of aluminum nitride which is ~6.1 eV corresponding to ~203nm. Here, we describe the key advances in physics and materials science that enabled these remarkable short wavelength photonic devices that stand to make a dramatic impact on future applications of photonics to biology, healthcare, and beyond.