A self-temperature-compensated ring oscillator using one-type-only resistor

Temperature-induced frequency drift remains a critical challenge in ring oscillator design for low-power integrated systems. Conventional compensation methods rely on negative temperature coefficient (NTC) diffusion resistors, which suffer from poor process compatibility and reliability issues. This paper presents a novel self-temperature-compensated ring oscillator architecture based on frequency-locked loop (RFLO) framework using one-type-only-resistor. By leveraging an asymmetric differential pair in the operational amplifier (OPA), a controlled voltage mismatch ΔV with negative temperature coefficient is actively generated to cancel the positive drift of reference voltage VIN. The design is implemented in 12 nm FinFET technology with a 1.8 V supply, achieving a temperature coefficient of 31.2 ppm/°C over -40°C to 120°C. The proposed method eliminates NTC resistors, enhances process compatibility, and reduces area by 35% compared to conventional RFLO.