Numerical investigation of temperature field evolution in detectors irradiated by a moving pulsed laser

This study presents a numerical investigation of the temperature field characteristics in the CMOS detector subjected to a 532 nm moving nanosecond pulsed laser. A finite element thermal damage model is developed using COMSOL software to simulate the dynamic temperature distribution under different laser moving speeds. The findings show that as the laser moving speed increases, the heat-affected zone expands and the peak temperature position shifts progressively along the laser moving direction. Meanwhile, the lowered energy deposition per unit area causes a slower rate of temperature rise and diminished thermal damage effects. Beyond a critical speed threshold, the laser irradiation becomes insufficient to cause effective detector damage. This work provides valuable theoretical support for the design of laser protection in optoelectronic devices.