Highly efficient, deep-ultraviolet luminescence in hBN moiré quantum wells

Science 2026 Open access

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Authors: Chengyun Hong, Fangzhou Zhao, Su-Beom Song, Sangho Yoon, Seong-Joon Jeon, M. Ajmal Khan, Ye Tao, Dong‐Hwan Yang, W. K. Lee, Jun-Ho Kim, Jun-Ho Kim, Sera Yang
+14 more Hyungseob Cho, Sumin Lee, Seok Young Min, Kenji Watanabe, Takashi Taniguchi, Seunghyup Yoo, Changsoon Cho, Si‐Young Choi, H. Hirayama, Lede Xian, Moon‐Ho Jo, Angel Rubio, Jonghwan Kim, Jonghwan Kim
DOI: 10.1126/science.aeb2095
Cited by: 6
References: 76

Abstract

Twisted stacking of two-dimensional van der Waals (vdW) semiconductors creates moiré superlattices, which provides unprecedented control over quantum states and their light-matter interactions. We demonstrate that a simple twist interface between two single-crystalline bulks of hexagonal boron nitride (hBN) creates moiré quantum wells (QWs) embedded in a three-dimensional vdW structure. hBN moiré QWs strongly confine charge carriers under both optical excitation and electrical injection. Despite their indirect bandgap, they emit intense deep-ultraviolet luminescence in the extreme wavelength bands from 215 to 240 nanometers, exceeding that of state-of-the-art conventional aluminum gallium nitride (AlGaN) multiple QWs by more than an order of magnitude. Furthermore, the twist angle control allows wide tunability of luminescence energy and efficiency in moiré QWs.

Fields of Study & Subjects

2D Materials and Applications GaN-based semiconductor devices and materials Graphene research and applications

Publication details

Journal / source
Science
Publisher
American Association for the Advancement of Science (AAAS)
Volume
391
Issue
6791
Pages
eaeb2095–eaeb2095
Publication date
19 March 2026
Language
EN