Ferroelectricity in atomic-scale titanium dioxide dielectric films
Abstract
Ferroelectricity at atomic-scale thickness would have important applications in next-generation electronics. Here, we report that a ferroelectric phase can be stabilized in titanium dioxide (TiO 2 ) films, a commonly known dielectric that is widely used in semiconductor technologies, by reducing thickness to
Fields of Study & Subjects
Semiconductor materials and devices
Ferroelectric and Piezoelectric Materials
Electronic and Structural Properties of Oxides
Publication details
- Journal / source
- Science
- Publisher
- American Association for the Advancement of Science (AAAS)
- Volume
- 392
- Issue
- 6795
- Pages
- 280–284
- Publication date
- 5 March 2026
- Language
- EN