Alternating atomic-dipole layers and switching dynamics in Al 1-x Sc x N ferroelectrics

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Authors: Yonghui Zheng, Ruirong Bai, Tianjiao Xin, Xuanyu Zhao, Yan Cheng, Yu‐Ning Wu, Yingfen Wei, Binghui Ge, He Tian, Shiyou Chen, Qi Liu, Chun‐Gang Duan
+1 more Ming Liu
Cited by: 1
References: 58

Abstract

N ferroelectrics exhibit exceptional polarization and thermal stability, making them highly promising for a wide range of electronic applications. However, a more profound understanding is required regarding the atomic-scale mechanism through which cation substitution lowers the switching energy barrier and thus reduces the coercive field. We used spherical aberration-corrected transmission electron microscopy to reveal a periodic modulation of cation-anion spacing along the polarization direction, forming alternating atomic dipole layers. This modulation arises from energetically favorable chemical ordering of aluminum and scandium atoms between adjacent layers, with layer-resolved asymmetry in atomic arrangement. In situ imaging directly captures atomic-scale, noncollective, stepwise polarization switching, revealing intermediate states and local spacing fluctuations. Compositional inhomogeneity in these dipole layers creates multiple transient states that reduce the switching energy barrier. Our findings connect atomic-scale dipole structures to polarization switching kinetics, enabling the rational design of wurtzite ferroelectrics.

Fields of Study & Subjects

Ferroelectric and Piezoelectric Materials Ferroelectric and Negative Capacitance Devices Acoustic Wave Resonator Technologies

Publication details

Journal / source
Science
Publisher
American Association for the Advancement of Science (AAAS)
Volume
393
Issue
6806
Pages
85–89
Publication date
2 July 2026
Language
EN