Indium-free perovskite/silicon tandem solar cells with tin oxide recombination layer and electrodes

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Authors: Wei Shi, Shibo Wang, Shumao Wang, Yongzhe Zhang, Xiaoqiong Ren, Cao Yu, Xinya Niu, Bo Gao, Liu Yang, Bowen Yang, Wenhua Li, Xinyao Sun
+18 more Jianwei Yu, Jun Zhu, Shengxing Zhou, Yihua Chen, Fengxian Cao, Kun Gao, Chang Wang, Xi Chen, Shaofei Yang, Jian Zhou, Chenxu He, Ruy S. Bonilla, Yiliang Wu, Qi Chen, Zijia Li, Yuan Cheng, Xinbo Yang, Xiaohong Zhang
Cited by: 3
References: 62

Abstract

Indium-based transparent conductive oxides are widely used as electrodes and recombination layers in perovskite/silicon tandem solar cells, yet their scalability is constrained by indium scarcity and sputtering-induced damage. We report high-efficiency and stable indium-free perovskite/silicon tandem solar cells enabled by reactive plasma deposited tin oxide (RPD-SnO x ). For RPD-SnO x as the recombination layer, we achieved a certified efficiency of 33.6%. Fully indium-free tandems that used RPD-SnO x as both recombination layer and electrodes delivered a champion power conversion efficiency of 33.2% (1 square centimeter) and a minimodule with a certified efficiency of 31.0% (207.9 square centimeters). Dense and uniform self-assembled monolayer anchoring enabled by RPD-SnO x suppressed nonradiative recombination and reduced halide migration. Indium-free minimodules exhibited high thermal, damp-heat, and outdoor operational stability and retained 65% of their maximum initial efficiency after 105 days of outdoor operation.

Fields of Study & Subjects

Perovskite Materials and Applications Thin-Film Transistor Technologies TiO2 Photocatalysis and Solar Cells

Publication details

Journal / source
Science
Publisher
American Association for the Advancement of Science (AAAS)
Volume
393
Issue
6807
Pages
200–206
Publication date
18 June 2026
Language
EN