Simulation Study of Enhancement-Mode HEMTs with Graded AlGaN Barriers and GaN/InGaN Double Quantum Well Caps

Semiconductors 2026

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Authors: Xiang-Yu Liu, Li-E Cai, Yuehua Chen, Zhi-Yu Ma, Da Feng, Haifeng Lin, C. J. Sun, Cheng Zai-jun, Lin Hai-feng, Rongsheng Zheng
DOI: 10.1134/s106378262560398x
Cited by: 1
References: 47

Abstract

This study proposes an enhancement-mode high electron mobility transistor (HEMT) with a six-region graded Al0.25Ga0.75N barrier layer, divided into three l

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
Semiconductors
Publisher
Pleiades Publishing Ltd
Volume
60
Issue
5
Pages
540–554
Publication date
1 May 2026
Language
EN