Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications

Semiconductors 2026

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Authors: Anil Prasad Dadi, Ellapu Bhanu Prakash, Vijay Maitra, Tathagata Ghose, Ashok Ray, Sushanta Bordoloi
DOI: 10.1134/s1063782625604704
Cited by: 1
References: 45

Abstract

GaN HEMTs are essential devices in high-voltage, fast switching operation in 5G and millimeter-wave applications. This research presents an AlGaN/GaN HEMT

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced Power Amplifier Design

Publication details

Journal / source
Semiconductors
Publisher
Pleiades Publishing Ltd
Volume
60
Issue
5
Pages
469–482
Publication date
1 May 2026
Language
EN