Ultrafast Laser-Induced Forward Gold Transfer for Spatially Selective Formation of Schottky Contacts on n-Type Silicon

Technical Physics 2026

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Authors: Michael S. Kovalev, Evgenia V. Ulturgasheva, S. P. Babina, I. A. Voronov, Ivan M. Podlesnykh, George K. Krasin
DOI: 10.1134/s1063784225601462
Cited by: 0
References: 21

Abstract

Abstract The Au/n-Si Schottky contacts are formed using the ultrafast laser-induced forward transfer method for laser fluence of 7.8–25.9 J/cm2. It is shown that the minimal energy ensures the lowest content of oxygen at the interface, a barrier height of ~0.60 eV, and the nonideality index close to unity, indicating the predominance of thermionic emission. An increase in this energy leads to oxidation, an increase in the barrier heterogeneity, and degradation of rectifying properties despite the apparent increase in the calculated barrier height.

Fields of Study & Subjects

Semiconductor materials and interfaces Silicon and Solar Cell Technologies Laser Material Processing Techniques

Publication details

Journal / source
Technical Physics
Volume
71
Issue
1
Pages
34–38
Publication date
1 January 2026
Language
EN