Analytical model of interface trap impact on normally-OFF p-GaN HEMTs for precise performance prediction in high-power applications

The European Physical Journal Plus 2026

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Authors: Sina Mehrad, Ali A. Orouji, Meysam Zareiee

DOI: 10.1140/epjp/s13360-026-08222-2

Cited by: 1

References: 15

Fields of Study & Subjects

GaN-based semiconductor devices and materials Advancements in Semiconductor Devices and Circuit Design Semiconductor Quantum Structures and Devices

References 15