Self-powered UV photodetector based on type-II Be0.06Zn0.94O0.77S0.23/Ga2O3 heterojunction with dual built-in electric fields synergy

View at publisher
Authors: Ke Tang, Teng Zhang, Yongdan Zhu, Jinqiao Yi
Cited by: 1
References: 64

Fields of Study & Subjects

Ga2O3 and related materials ZnO doping and properties GaN-based semiconductor devices and materials

Publication details

Journal / source
The European Physical Journal Special Topics
Publisher
Springer Science and Business Media LLC
Volume
235
Issue
24
Pages
5225–5236
Publication date
31 March 2026
Language
EN