A Co-optimization Framework for Multi-layer Design Rule Constraints

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Authors: Guohao Chen, Chang Liu, Xingyu Tong, Peng Zou, Jianli Chen, Zhifeng Lin
Cited by: 0
References: 20

Abstract

Compliance with design rule constraints constitutes a fundamental prerequisite for successful fabrication in advanced integrated circuit design. As foundries progressively introduce process-specific customization for better performance, new design rule challenges emerge across the device layers, such as implant layer constraints in the designs with multiple threshold voltages, and the trim poly layer constraints in the self-aligned double patterning (SADP). Conventional methodologies typically address such topological constraints in the legalization stage. In addition, filler insertion during chip finishing serves to improve manufacturability, such as a more uniform chip surface and a more robust power integrity. However, improper filler insertion might undermine the previous legalized layout. This work presents a co-optimization framework in the legalization and filler insertion stage, adaptable to multi-layer constraint scenarios. We model the filler insertion problem as a multi-branch tree and develop a dynamic programming-based pre-pruning algorithm, which is also able to detect violations in the legalization stage. To reduce runtime, two violation detectors are introduced for legalization, including a look-up table (LUT) inference method and a greedy scanning algorithm. These components are systematically integrated into a co-optimization framework, with configurable parameterization to ensure scalability across diverse constraints. Experimental results show that our algorithm can significantly reduce the number of violations compared with state-of-the-art work and the commercial tool.

Fields of Study & Subjects

VLSI and FPGA Design Techniques Low-power high-performance VLSI design Copper Interconnects and Reliability

Publication details

Journal / source
ACM Transactions on Design Automation of Electronic Systems
Volume
31
Issue
4
Pages
1–28
Publication date
26 January 2026
Language
EN