Effect of Schottky Metal Contacts on Barrier Heights of Vertical p-type Diamond Rectifiers, with an ITO/Diamond Heterojunction Benchmark
Abstract
Vertical p/p+ single-crystal diamond rectifiers were fabricated using a 5 μm boron-doped drift layer on a heavily doped substrate. We investigated the effect of different Schottky metal contacts (Ti, Ni, Cr, Pt, Au) on device performance, as well as use of an n-type indium tin oxide (ITO) layer to form a heterojunction. The Schottky barrier heights showed only a weak dependence on metal work function, consistent with significant Fermi-level pinning at the metal–diamond interface. Among the Schottky rectifiers, Ni/Au contacts demonstrated the best performance with low ideality factors (
Fields of Study & Subjects
Diamond and Carbon-based Materials Research
Graphene research and applications
Tunneling and Rock Mechanics
Publication details
- Journal / source
- ECS Journal of Solid State Science and Technology
- Publisher
- The Electrochemical Society
- Volume
- 15
- Issue
- 1
- Pages
- 015003–015003
- Publication date
- 1 January 2026