Cu/Ag Thickness Ratio–Dependent Structural and Electrical Behavior of AZO/Cu/Ag/AZO Multilayers on Flexible PET Substrates
Abstract
This study investigates the AZO/Cu/Ag/AZO multilayer thin films deposited on PET substrates via RF confocal magnetron sputtering, focusing on the influence of Cu and Ag interlayer thickness ratios, while maintaining a constant total metal thickness of 10 nm, on their microstructural, optical, and electrical properties. X-ray diffraction (XRD) analysis combined with Rietveld refinement revealed that Ag-rich configurations enhance crystallinity, reduce residual stress, and promote a pronounced (002) preferential orientation in the AZO layers, which is attributed to improved nucleation behavior and reduced interfacial disorder. Atomic force microscopy (AFM) analysis demonstrated that the Cu/Ag thickness ratio effectively modulates nanoparticle coalescence and surface roughness. Optical characterization revealed that Ag-rich films exhibit higher visible transmittance owing to improved film continuity and constructive interference effects, whereas Cu-rich structures favor enhanced near-infrared (NIR) transparency. Electrical properties, evaluated using Hall effect measurements, indicated that a balanced Cu/Ag configuration (5/5 nm) delivers optimal charge transport, achieving the lowest resistivity (1.22 × 10 −3 Ω.cm), the highest carrier mobility (7.08 cm 2 .V −1 .s −1 ), and the maximum figure of merit (6.88 × 10 −5 Ω −1 ). These results demonstrate that rational Cu/Ag interlayer engineering enables an effective balance between transparency and conductivity in flexible transparent electrodes, opening viable pathways for applications in wearable electronics, flexible photovoltaics, and foldable display technologies.
Fields of Study & Subjects
ZnO doping and properties
Nanomaterials and Printing Technologies
Thin-Film Transistor Technologies
Publication details
- Journal / source
- ECS Journal of Solid State Science and Technology
- Volume
- 15
- Issue
- 1
- Pages
- 014003–014003
- Publication date
- 1 January 2026