A CO 2 Plasma Based Room-Temperature Copper Etch Process
Abstract
Fine copper lines were fabricated using carbon dioxide, a major greenhouse gas, as an oxygen source in a plasma-based copper etching process operated at room temperature. The copper film was oxidized into a rough and porous oxide film with small Cu 2 O crystals, accompanied by a noticeable volume expansion. The oxidation mechanism is similar to that observed in O 2 plasma oxidation process but at a slower rate due to the limited supply of reactive oxygen elements and surface blocking by CO and CO 2 species. These findings suggest the potential use of other oxygen-containing gases for plasma-based copper interconnect fabrication.
Fields of Study & Subjects
Copper Interconnects and Reliability
Plasma Diagnostics and Applications
Copper-based nanomaterials and applications
Publication details
- Journal / source
- ECS Journal of Solid State Science and Technology
- Volume
- 15
- Issue
- 2
- Pages
- 024006–024006
- Publication date
- 1 February 2026
- Language
- EN