Impact of Microcrystalline Silicon Crystallization on the Efficiency of Commercial Tunneling Passivated Back Contact Solar Cells

Tunneling passivated back-contact (BC) solar cells represent a prominent approach for achieving high-efficiency crystalline silicon photovoltaic devices and hold considerable potential for widespread market adoption. This study systematically investigates the impact of the crystallization ratio of the microcrystalline silicon ( μ -Si) layer within BC solar cells on boron doping characteristics, defect passivation efficacy, and overall device performance. The results indicate that at an approximate crystallization ratio of 84.3% in the μ -Si layer, the synergistic interaction between crystallization and doping is optimized, resulting in superior doping uniformity and enhanced interface passivation. Under these conditions, the fabricated solar cells demonstrate a photoelectric conversion efficiency ( PCE ) of up to 27.59%, accompanied by excellent reproducibility. The findings of this research provide a theoretical foundation and technical guidance for optimizing boron-doped μ -Si layers in the manufacturing processes of high-performance BC solar cells.