Correlating Structure, Optical, and Dielectric Properties in SiC/PS Nanocomposites With Varying SiC Filler Concentrations

Silicon carbide (SiC) nanostructures have been prepared by the carbothermal reduction method, and Scanning Electron Microscopy (SEM) images revealed that nanotubes and crystallite structures are formed. To correlate filler concentration dependence in the polymer composite materials, SiC/polystyrene (PS) composites were fabricated as 1%–10% SiC/PS and investigated the structural, optical, and dielectric properties of them. X‐ray diffraction (XRD) confirmed β‐SiC (3C‐SiC) and a broad characteristic peak of PS in the composite materials. Crystallite size for pure SiC, Debye–Scherrer, and Williamson–Hall methods was used and obtained as ∼44.2 and ∼13.8 nm, respectively. In composites, SiC peaks intensified with the increase in filler concentration. For 3% SiC/PS ‐DWH ≈ 24.23 nm; ε = −1.53 × 10 −3 (slight compressive), for 5% DWH ≈ 16.74 nm; ε = +2.99 × 10 −3 (tensile), for 7% DWH ≈ 30.23 nm; ε = +4.18 × 10 −4 (highest crystallinity with the lowest stress), and for 10% DWH ≈ 19.91 nm; ε = +1.64 × 10 −2 (large tensile strain). For 1%–5% SiC/PS composite materials, from Ultraviolet–Visible (UV–vis) spectroscopy, Tauc plots showed larger band gaps (direct 3.91–4.22 eV, indirect 2.91–3.82 eV) from better dispersion and fewer defect states; at 7%–10% SiC/PS composite materials, gaps could not be measured because absorption was too strong. Fourier Transform Infrared (FTIR) preserved PS fingerprints while revealing SiC‐related bands, strengthening with loading, indicating physical interactions. Dielectric spectroscopy showed systematic rises in ε ′, ε ″ with the SiC content dominated by the Maxwell–Wagner–Sillars polarization. Overall, 3%–5% SiC/PS composite materials balance sharper optical edges; structurally, 7% SiC/PS composite materials stand out with the highest crystallinity and minimal residual stress.