The Effects of the Angle of Incidence and Gallium Doping Level on the Performance of a CIGS Solar Cell Studied Under Dynamic Frequency Under Monochromatic Illumination

This article presents a model for studying a basic CIGS solar cell in dynamic frequency mode under monochromatic illumination. The study begins by solving the differential equation that highlights the expression of minority carrier density, followed by those of photocurrent density, photovoltage, short-circuit photocurrent density, and open-circuit photovoltage. This work finalizes the identification and study of the expressions for the shape factor, power, and conversion efficiency of the photovoltaic cell. The study of the dynamic impedance of the basic CIGS solar cell using Bode and Nyquist diagrams is also developed in this work. Thus, we observe that an increase in the angle of incidence tends to decrease the power of the photovoltaic cell, the form factor, and the conversion efficiency. On the other hand, increasing the gallium doping rate tends to improve the cell's performance. Furthermore, the results obtained from the impedance study show the existence of two specific pulsation zones. The first zone [0 rad⁄s; 3.16.107 rad⁄s] where the modulus is a constant; this is the static regime. The second zone ]3.16.107 rad⁄s; 108 rad⁄s [where the modulus increases; this is the dynamic regime. An increase in the angle of incidence with the dynamic impedance modulus is observed. Furthermore, the variation in the angle of incidence has no effect on the resonance frequency or phase. Furthermore, increasing the gallium doping level increases the dynamic resistance modulus. Subsequently, a slight decrease in the impedance phase is observed, synonymous with fluctuations in the pulse limiting the phase shift effects between the signal and the carriers produced. Finally, the Bode and Nyquist representations of the dynamic impedance show that inductive effects remain dominant.