Direct resist-free patterning of an organic semiconductor via thermal scanning probe lithography

Organic semiconductors are widely regarded as a key material platform for next generation flexible and wearable electronics. Realizing high-resolution, well-defined patterns is essential to scale organic field effect transistors for higher device density and greater electrical performance. Conventional photolithographic patterning technologies typically face the challenges of chemical contamination induced by photoresist, developers and chemical etchant. Here, we report a resist-free, maskless patterning approach for pentacene based on thermal scanning probe lithography (t-SPL), exploiting the localized thermochemical conversion of the soluble precursor 13,6-N-sulfinylacetamidopentacene into pentacene. By tuning key t-SPL parameters, including probe loading conditions and scanning velocity, well-defined pentacene nanostructures with a minimum full width at half maximum of 200 nm were achieved. Directly patterned pentacene channels were further integrated into field-effect transistors, demonstrating electrical functionality. This work establishes t-SPL as a viable route for direct, high-resolution patterning of organic semiconductors and provides a promising pathway toward further miniaturization and integration of organic electronic devices.