Structural and electrical characterization of Hf0.5Zr0.5O2 thin films crystallized by rapid thermal annealing

Abstract The effects of rapid thermal annealing (RTA) temperature on the structural and electrical properties of 10 nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) thin films were investigated. Structural analyses revealed that the films remained largely amorphous at low annealing temperatures and crystallized above 600 °C, where the ferroelectric orthorhombic phase became dominant. At higher temperatures, the formation of the monoclinic phase was also observed. Electrical characterization demonstrated a strong dependence of ferroelectric behavior on annealing temperature. Films annealed near 600 °C exhibited the most stable ferroelectric domains, strongest polarization switching, and most distinct hysteretic behavior, whereas higher temperatures led to a gradual degradation of the electrical response. These results indicate that an annealing temperature around 600 °C provides the optimum condition for achieving enhanced ferroelectric performance in HZO thin films.