Time-Resolved Photoluminescenee Studies of III-Nitrides

III-Nitride based devices have great potential in applications such as UV/blue laser diodes (LDs) and light-emitting diodes (LEDs), solar-blind UV detectors, and high-power/high-temperature electronic devices. Researchers in this field have made extremely rapid progress toward material growth as well as device fabrication [ 1 ]. The commercial availability of superbright blue and green LEDs and blue/UV LDs based on III-nitrides is a clear indication of the great potential of this material system [ 2-4 ]. Recently, there has been much research concerning the fundamental optical transitions in III-nitrides, including GaN epilayers, InGaN and AlGaN alloys, and multiple quantum wells (MQWs) comprising alternating layers of https://www.w3.org/1998/Math/MathML" display="inline"> In x Ga 1 - x N / Ga 1 - x N / GaN , In x Ga 1 - x N / In y Ga 1 - y N ( x ≠ y ) and GaN / Al x Ga 1 - x N . In particular, studies of optical transitions in these materials are extremely important for understating their fundamental properties as well as for their practical applications. Fundamentally important information regarding exciton binding energy and Bohr radius, carrier- and exciton-phonon interactions, decay lifetimes, and quantum efficiencies can be obtained from these studies [ 6 ].