Boron Doped Diamond Films

Boron doped diamond films obtained by a CVD method on single-crystal Si and A1N ceramics have been investigated by means of Electron Probe Microanalysis (EPMA), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). SIMS analyses of the films grown at different conditions have shown a B/C atomic ratio range from 4.3 × 10 -4 to 3.5 × 10 -3 . The films are comprised of octahedra (2-5 μ m) with a block structure of 0.1-0.3 μ m in size. Resistance of the films varied in the range 10 3 to 10 6 Ohm. Luminescence under electron beam excitation is light-green, which differs from that of undoped diamond films which luminesce in the blue.