CVD Diamond Growth on Porous Si

The ultrafine diamond powders (UFD) were incorporated into Si substrates by using electrochemical etching in UFD contained HF:C 2 H 5 OH: H 2 O solution. Produced by this way thin layers have shown typical for porous silicon optical and photoluminescence properties. On the treated Si wafers the significant increasing of diamond nucleation density for CVD diamond grown comparing with substrates prepared by common scratching method and ano-dized in electrolyte without UFD was obtained. The results of the optical, IR, Raman, X-ray, SEM investigations of the samples at the different stages of substrate preparation and diamond films growth processes are presented. The technology could be useful for both the diamond nucleation increasing and the porous Si layers protection from the environment influence by the grown CVD diamond films coating.