Diamond Based p-i-n Transistor

Diamond based semiconductor structure with an active insulating zone is a very perspective component of diamond electronics. The work of such device is based on space charge limited current (SCLC) or electron-hole recombination and space charge limited double injection current in insulator. The main advantage of the structure is, first of all, a lower concentration of defects in the dielectric active zone than in doped one, that allows to receive high mobility of the carriers in diamond, and second, in elimination of restrictions, connected with deep acceptor level of B in diamond. P-i-M and p-i-n diodes, p-i-p structures, p-i-p field effect transistor (FET) with a Schottky barrier gate and p-i-p FET with a SiO 2 gate insulator have been already developed and described [ 1-5 ]. Use of i-diamond as working area leads to the improvement of working parameters of active diamond devices. In p-i-p FET the holes are injected from p-diamond and transported by SCLC mechanism in the i-region. However currents of double injection significantly exceed SCLC [ 6 ]. One of the variants of high power insulated gate p-i-n transistor is described [ 7 ].