Detailed Modeling and Sensitivity Analysis of a Rotating Disk MOCVD Reactor

We investigate computationally a rotating disk chemical vapor deposition reactor for the epitaxial growth of gallium arsenide. The model includes finite rate kinetics in the gas-phase and on the layer surface as well as detailed multicomponent transport algorithms. A converged numerical solution is obtained using an outer Newton&s;s method for the gas-phase unknowns coupled to an inner Newton iteration yielding the surface species site fractions. A computationally efficient, Jacobian based method is used to perform a sensitivity analysis of both the gas-phase and the surface reaction mechanisms in order to investigate the rate limiting factors of the growth process.