Keating-Harrison Model for Wide Band Gap Semiconductor Elastic Properties Description
Abstract
On the basis of the direct comparison of deformation schemes in Keating and Harrison models the expressions relating force constants to crystal covalence, covalent energy and nearest neighbor distance have been obtained. Also the numerical calculations of elastic coefficients for the cubic and hexagonal modifications of diamond, silicon carbide and nitrides of B, Al, and Ga have been performed.
Fields of Study & Subjects
Elasticity and Wave Propagation
High-pressure geophysics and materials
Boron and Carbon Nanomaterials Research
Publication details
- Journal / source
- CRC Press eBooks
- Pages
- 262–265
- Publication date
- 2 February 2026
- Language
- EN
- Document type
- Book chapter