AlN Thin Film Deposition by Ion Beam Sputtering
Abstract
Our efforts have been devoted to the deposition of A1N protective films onto resistive heating elements of thin thermoprinting matrixes. A1N possesses sufficient hardness and is characterized by high thermal stability, good insulating properties and a high thermal conductivity. A promising means for growing A1N films at low temperatures is reactive ion beam sputtering [ 1 ] in which a hard target is sputtered by a beam of accelerated nitrogen ions. Phase formation occurs on separate arrival of the reaction components to the substrate.
Fields of Study & Subjects
Metal and Thin Film Mechanics
GaN-based semiconductor devices and materials
Advanced Materials and Semiconductor Technologies
Publication details
- Journal / source
- CRC Press eBooks
- Pages
- 398–402
- Publication date
- 2 February 2026
- Language
- EN
- Document type
- Book chapter