Epitaxial and Heteroepitaxial Growth of Silicon Carbide on SiC and AlN/A12O3 Substrates

CRC Press eBooks 2026 Book chapter

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Authors: A.N. Kuznetsov, Alexander Alexandrovich Lebedev, M. G. Rastegaeeva, P. V. Bogdanova, P. I. Terukov
DOI: 10.1201/9781003760405-57
Cited by: 0

Abstract

SiC films have been grown on SiC and A1N/AI2O3 substrates by reactive magnetron sputtering of a silicon carbide target in an Ar/CEU/SirL* mixed plasma. Crystal perfection was investigated as a function of substrate temperature in a temperature range 700-1400 K The SiC epilayers surface were made into Schottky diodes by deposition of molybdenums films. Current-voltage and capacitance-voltage measurements showed an ôé-type conductivity with uncompensated donor concentration of 5 · 10 18 cm -3 . The barrier high was 1.0 eV

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and interfaces GaN-based semiconductor devices and materials

Publication details

Journal / source
CRC Press eBooks
Pages
421–428
Publication date
2 February 2026
Language
EN
Document type
Book chapter