Investigation of Optoelectronic Characteristics of Double Quantum Well Structure for Triangular Well Geometry

The present chapter deals with computation of absorption coefficient and oscillator strength for triangular double quantum well triple barrier structure for optical photodetector applications. For different structural, material, and characteristic parameter modifications, the lowest intersubband energy for a double quantum well structure is computed using the triangle potential. When compared to DQW structures, the finding is significant since the peaks of the transmission coefficient characteristic curve lack a quasi-peak, suggesting very minimal energy band spreading. The results have consequences for the design of MWIR photodetectors. For a variety of internal and structural parameters, the absorption coefficient of a double quantum well structure is also computed for the triangle potential in the presence of an electric field. Customizing the design limitations within the manufacturing limit optimizes the absorption profile. It is evident that the current configuration is more appropriate for high frequency applications when the outcome is contrasted with rectangular shape.