SEMI-QUANTITATIVE ANALYSIS ON OPTICAL OXIDE THIN FILMS USING CS COMPLEX SECONDARY IONS IN TOF-SIMS

Read full text
Authors: Xiaoyu Yang, Yun Cui, Chunxian Tao, Jianfei Chen, Shijie Liu, Jianda Shao
Cited by: 0
References: 15

Abstract

This study investigates the capabilities of “CsₙM⁺” and “Cluster Counting” methods for semi-quantitative analysis of optical oxide thin films in TOF-SIMS, including SiO₂ thin film, Ta₂O₅-SiO2 multilayer thin film and different ratios of HfO₂-SiO₂ mixed thin films systems. Quantitative XPS results of HfO2-SiO2 mixed thin films were obtained to compare with SIMS results. The study confirms that cluster counting of Cs complexes yields significantly better estimates the matrix composition than the “CsₙM⁺” approach in optical thin films when ignoring other trace elements and contaminants. Different element RSF and surface Cs coverage on each layer should be taken into consideration when applying “MCsₙ⁺” and “Cluster Counting” methods on any multilayer optical thin films.This study investigates the capabilities of “CsₙM⁺” and “Cluster Counting” methods for semi-quantitative analysis of optical oxide thin films in TOF-SIMS, including SiO₂ thin film, Ta₂O₅-SiO2 multilayer thin film and different ratios of HfO₂-SiO₂ mixed thin films systems. Quantitative XPS results of HfO2-SiO2 mixed thin films were obtained to compare with SIMS results. The study confirms that cluster counting of Cs complexes yields significantly better estimates the matrix composition than the “CsₙM⁺” approach in optical thin films when ignoring other trace elements and contaminants. Different element RSF and surface Cs coverage on each layer should be taken into consideration when applying “MCsₙ⁺” and “Cluster Counting” methods on any multilayer optical thin films.

Fields of Study & Subjects

Ion-surface interactions and analysis Electron and X-Ray Spectroscopy Techniques Advanced Materials Characterization Techniques

Publication details

Journal / source
International Journal of Apllied Mathematics
Volume
39
Issue
1
Pages
1–13
Publication date
4 February 2026